Interface simulation of strained and non-abrupt III–V quantum wells. Part 2: energy level calculation versus experimental data

Published: 01-01-1996| Version 1 | DOI: 10.17632/ftph9b4css.1
C. Lamberti


Abstract This work describes a program able to compute the allowed energy levels and the respective wavefunctions of strained In_(1-x)Ga_x As_y P_(1-y)/In _(1-z)Ga_z As_w P_(1-w)for electrons, light and heavy holes in single- and multi-quantum wells and superlattices. Ground and excited states can be detected. The problem of non-abrupt interfaces has been taken into account. The computation on intentionally strained QW structures can be performed. The simulation of coupled wells may also be d... Title of program: PLSIMUL Catalogue Id: ADCN_v1_0 Nature of problem Modern CBE and MOCVD machines shows technological problems in the execution of instantaneous switches, inducing at the interfaces of III-V heterostructures a composition gradient spread over some monolayers [3,6]. As a consequence of this the interface layers are strained on the substrate lattice parameter and cause a local change in the bands profile along the growth direction able to remove of the heavy/light hole degeneration [7]. The bands profiles used as input by this program have been pre ... Versions of this program held in the CPC repository in Mendeley Data ADCN_v1_0; PLSIMUL; 10.1016/0010-4655(95)00119-0 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2019)