RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on an Si surface

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This paper presents a computer program, which facilitates the calculation of changes the intensity of RHEED oscillations from the heteroepitaxial structures of (0001)GaN films nucleated on a Si surface. The calculations are based on the use of a dynamical diffraction theory and different models of scattering crystal potential. The previous version of this program (AETW_v1_0) may be found at http://dx.doi.org/10.1016/j.cpc.2014.07.003.

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