#Silicon Carbide (SiC) TRIM.SP sputter yield results for incident particle (0 deg.) using surface binding energy values from TRIM.SP distribution tables. #Incident particle composition, He:D:T 1:1:1. #Energy(eV) Y-Si Y-C Y-SiC 20.00000 0.00E0 0.00E0 0.00E0 30.00000 5.40000E-04 5.80000E-04 1.12000E-03 40.00000 2.28000E-03 2.64000E-03 4.92000E-03 50.00000 4.62000E-03 4.20000E-03 8.82000E-03 60.00000 6.46000E-03 6.76000E-03 1.32200E-02 70.00000 8.69000E-03 7.83000E-03 1.65200E-02 80.00000 1.11400E-02 9.95000E-03 2.10900E-02 90.00000 1.24600E-02 1.18700E-02 2.43300E-02 100.00000 1.40500E-02 1.24500E-02 2.65000E-02 150.00000 2.04600E-02 1.78900E-02 3.83500E-02 200.00000 2.28200E-02 1.91800E-02 4.20000E-02 250.00000 2.59400E-02 2.22100E-02 4.81500E-02 300.00000 2.59700E-02 2.24400E-02 4.84100E-02 350.00000 2.82700E-02 2.52700E-02 5.35400E-02 400.00000 2.79700E-02 2.51400E-02 5.31100E-02 500.00000 3.00300E-02 2.61100E-02 5.61400E-02 600.00000 2.97000E-02 2.50700E-02 5.47700E-02 700.00000 2.92000E-02 2.52100E-02 5.44100E-02 800.00000 2.94700E-02 2.52000E-02 5.46700E-02