2026-10-15T14:28:25Z https://data.mendeley.com/oai

oai:data.mendeley.com/53ftv63746.1 2026-09-14T08:58:19Z

Dargar, Shashi Kant Electro-thermal simulation data for inter-tier heat coupling and service-time degradation in stacked BEOL IGZO transistors Mendeley Data This dataset supports a simulation study of how heat from an active transistor in one tier of a monolithic three-dimensional stack affects the reliability of a transistor in the tier below it. The device modelled is a back-end-of-line indium-gallium-zinc-oxide (IGZO) thin-film transistor with an 80 nm channel length, a 2.2 nm channel and a 6 nm HfO2 gate dielectric, placed in a two-tier stack separated by a SiO2 interlayer of 100 to 300 nm, matching interlayer thicknesses reported for fabricated two- and three-tier IGZO stacks. The coupled lattice-temperature and drift-diffusion problem was solved in Synopsys Sentaurus TCAD under two thermal boundary conditions: a substrate-referenced case in which the gate and source/drain lines reach the substrate through a via resistance, and a package-referenced case matching the boundary used in published models of stacked oxide memory arrays. The temperature imposed on the lower tier by an active neighbour was extracted and propagated through stretched-exponential donor-generation kinetics to a bias-stress lifetime and to a capacitorless-DRAM retention model. The data are organised in five folders. Simulation decks contains the Sentaurus structure scripts, device command files, parameter files and the Python post-processing scripts used to extract temperature profiles and fit slopes. Extracted data contains ten CSV tables holding every numerical result in the associated article: the single-device temperature rise against interlayer conductivity for four interconnect terminations; the victim channel temperature and lateral field against position with the neighbour active and idle; two-tier coupling against boundary case, interlayer thickness and conductivity; the package-referenced validation case; isothermal transfer characteristics on a grid of six temperatures and eight generated-donor densities for a deep and a shallow donor species; the threshold-voltage temperature coefficient and retention activation energy extracted from those grids; bias-stress lifetime ratios for three activation energies and two time exponents; and retention against read temperature at five service times. Figures contains the eight published figures as vector PDF and 600 dpi PNG, together with the Python scripts and the single data module that generate them, so that any figure can be reproduced without a simulator. Literature search contains nine Lens.org query exports covering 191 records across six keyword blocks, which support the novelty statement in the article. Documentation contains the full working record of the study, including simulation conditions, intermediate results, diagnostic steps and the corrections made during the work, and a map from each claim in the article to its source file. Device Modeling Design for Reliability Thin-Film Transistor Dargar, Abha Birla, Shilpi Dataset doi:10.17632/53ftv63746.1 oai:data.mendeley.com/53ftv63746.1 Creative Commons Attribution 4.0 International http://creativecommons.org/licenses/by/4.0 https://data.mendeley.com/datasets/53ftv63746 2026-09-14T08:58:19Z