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                <identifier>oai:data.mendeley.com/dmzhyn59ny.1</identifier>
                <datestamp>2019-06-29T08:59:35Z</datestamp>
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    <dc:creator>li, chengming</dc:creator>
    <dc:title>Data for: Surface morphology evolution of a polycrystalline diamond by inductively coupled plasma reactive ion etching (ICP-RIE)</dc:title>
    <dc:publisher>Mendeley Data</dc:publisher>
    <dc:description> XRD spectra of the original and O2 plasma etched PCD2. After etching at RFP of 100W, I&lt;111&gt;/&lt;110&gt;, which is the peak intensity ratio of the &lt;111&gt; and &lt;110&gt; orientation, decreases from 0.904 to 0.332. This demonstrates that the &lt;111&gt; crystal orientation of etched PCD exhibits weaker intensity and becomes less dominant in XRD diffraction content after etching. This was due to preferential etching /oxidation of the &lt;111&gt; orientation compared with other crystal orientations, which agrees with existing literature. However, after subsequent etching at RFP of 400W, I&lt;111&gt;/&lt;110&gt; decreases slightly from 0.332 to 0.235. This minor change occurred owing to the dominant role of ion-bombardment enhanced etching when the RFP was as high as 400W, which surpassed the reactive selective etching on crystal orientations.</dc:description>
    <dc:subject>X-Ray Diffraction</dc:subject>
    <dc:type>Dataset</dc:type>
    <dc:identifier>doi:10.17632/dmzhyn59ny.1</dc:identifier>
    <dc:identifier>oai:data.mendeley.com/dmzhyn59ny.1</dc:identifier>
    <dc:rights>Attribution-NonCommercial 3.0 Unported</dc:rights>
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    <dc:date>2019-06-29T08:59:35Z</dc:date>
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