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                <datestamp>2020-07-10T15:28:28Z</datestamp>
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    <dc:creator>Fleck, Martin</dc:creator>
    <dc:title>Analysis code and raw data for &apos;Automatic Etch Pit Density Analysis in Multicrystalline Silicon&apos;</dc:title>
    <dc:publisher>Mendeley Data</dc:publisher>
    <dc:description>&quot;etch_pit_density_analysis.zip&quot; contains the analysis code. See the README.txt for more information.

&quot;secco_etched_mc_Si_wafer_image.png&quot; - Optical microscope image, depicting a 2.5cm*1.2cm Secco etched multicrystalline Silicon wafer. Dark spots are etch pits, typically associated with dislocation lines that intersect with the wafer surface. Dark lines are grain boundaries. The leftmost 20% of the wafer have been in contact with the sample carrier during defect etching, explaining the uneven etch result.</dc:description>
    <dc:subject>Surface Etching</dc:subject>
    <dc:subject>Dislocation Structure</dc:subject>
    <dc:subject>Multicrystalline Silicon Cell</dc:subject>
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    <dc:identifier>doi:10.17632/dv43z9x72t.1</dc:identifier>
    <dc:identifier>oai:data.mendeley.com/dv43z9x72t.1</dc:identifier>
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