2026-10-10T03:21:59Z https://data.mendeley.com/oai

oai:data.mendeley.com/fgfz3m2j6x.1 2026-10-02T10:38:51Z

li, gq Dataset: Position-Specific UVO Treatment on Dual-Active-Layer IGTO TFTs Mendeley Data This dataset contains the electrical characterisation data of dual-active-layer amorphous IGTO thin-film transistors (TFTs) treated with ultraviolet–ozone (UVO) at two different positions within the channel stack. Two factors are varied: the treatment position (top layer or bottom layer) and the UVO duration (0, 10, 15, 20 and 25 min), where 0 min is the untreated reference. It comprises 10 device conditions and 1,010 transfer-curve datapoints, each measured by sweeping the gate voltage from −10 V to 40 V at a constant drain bias of 10 V (V_DS = 10 V), for devices with a channel W/L of 50/1 and a 100 nm SiO₂ gate dielectric. The data show that the effect of UVO treatment depends on which layer is treated: top-layer treatment mainly suppresses the off-state current, whereas bottom-layer treatment mainly improves carrier transport, raising saturation mobility, on-state current and the current on/off ratio. Materials Science Dataset doi:10.17632/fgfz3m2j6x.1 oai:data.mendeley.com/fgfz3m2j6x.1 Creative Commons Attribution 4.0 International http://creativecommons.org/licenses/by/4.0 https://data.mendeley.com/datasets/fgfz3m2j6x 2026-10-02T10:38:51Z