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    <responseDate>2026-10-15T05:48:05Z</responseDate>
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            <header>
                <identifier>oai:data.mendeley.com/vz3zwm4dxk.1</identifier>
                <datestamp>2026-09-06T21:31:56Z</datestamp>
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            <metadata><oai_dc:dc xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
    <dc:creator>Dargar, Shashi Kant</dc:creator>
    <dc:title>Dataset: Thermionic rather than trap-assisted off-state conduction in BEOL a-IGZO TFTs</dc:title>
    <dc:publisher>Mendeley Data</dc:publisher>
    <dc:description>This dataset accompanies the manuscript &quot;Thermionic rather than trap-assisted off-state conduction in back-end-of-line a-IGZO thin-film transistors: activation-energy evidence and the numerical validity floor of device simulation&quot; (Microelectronics Journal). It contains the complete artefact set of a trap-resolved Sentaurus Device (W-2024.09-SP1) study of a dual-gate BEOL a-IGZO transistor: all 28 simulated transfer characteristics (143 bias points each) at 300, 350 and 400 K under three numerical probes (baseline mesh, 2.3× refined mesh, 100× tighter tolerance) and two arithmetic precisions (80-bit and 128-bit), together with the drain-field (V_DS = 1.2 V), ten-fold oxygen-vacancy-density, and shallow vacancy-level (E_C − 0.3 eV) test conditions.

The deposit includes every Sentaurus input deck (structure, parameter file with per-value provenance, all run variants including the six minority-carrier solution attempts), the local IGZO material definition, the DF-ISE extraction script, and all figure sources. A dependency-free script, scripts/analyze.py, reproduces every quantitative value in the paper&apos;s Table 2 and Sections 4.2–4.5 directly from the raw CSV data with the single command: python3 scripts/analyze.py data. See README.md for the file manifest and regeneration instructions.

Key results supported by this data: purely thermionic off-state conduction (activation energy on a single line, slope −0.836 eV/V, over sixteen decades of current); no trap-assisted-tunnelling signature under twelve-fold drain field, ten-fold vacancy density, or the DFT-favoured shallow vacancy level; and a measured numerical validity floor of double-precision drift–diffusion simulation (3×10⁻²⁴–5×10⁻²³ A/µm at 300–400 K), lowered twelve decades by 128-bit arithmetic.</dc:description>
    <dc:subject>Semiconductor Device</dc:subject>
    <dc:subject>Device Modeling</dc:subject>
    <dc:subject>Thin-Film Transistor</dc:subject>
    <dc:contributor id="https://orcid.org/0009-0008-4858-8591">A S, Reshma Mohan</dc:contributor>
    <dc:contributor>Dargar, Abha</dc:contributor>
    <dc:type>Dataset</dc:type>
    <dc:identifier>doi:10.17632/vz3zwm4dxk.1</dc:identifier>
    <dc:identifier>oai:data.mendeley.com/vz3zwm4dxk.1</dc:identifier>
    <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
    <dc:rights>http://creativecommons.org/licenses/by/4.0</dc:rights>
    <dc:relation>https://data.mendeley.com/datasets/vz3zwm4dxk</dc:relation>
    <dc:date>2026-09-06T21:31:56Z</dc:date>
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