<?xml version="1.0" encoding="UTF-8" standalone="yes"?><?xml-stylesheet type="text/xsl" href="/oai-pmh-repository/static/oai2.xsl"?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
    <responseDate>2026-10-12T05:29:35Z</responseDate>
    <request verb="GetRecord" identifier="oai:data.mendeley.com/whksg7scsx.1" metadataPrefix="oai_dc">https://data.mendeley.com/oai</request>
    <GetRecord>
        <record>
            <header>
                <identifier>oai:data.mendeley.com/whksg7scsx.1</identifier>
                <datestamp>2020-05-24T19:37:11Z</datestamp>
            </header>
            <metadata><oai_dc:dc xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
    <dc:creator>Farhad, Syed Farid Uddin</dc:creator>
    <dc:title>Structural, Optical and Electrical Properties of Nanocrystalline Cu2O Thin Films Grown by Pulsed Laser Deposition</dc:title>
    <dc:publisher>Mendeley Data</dc:publisher>
    <dc:description>S.F.U. Farhad and D. Cherns, “Structural, Optical and Electrical properties of nanocrystalline Cu2O thin films grown by Pulsed Laser Deposition” paper# J8.30 Document: # 1868681 at Symposium J: Physics of Oxide Thin Films and Heterostructures, Material Research Society (MRS), Spring Meeting and Exhibition, 20-25 April, 2014, San Francisco, CA, USA

Abstract: Phase pure Cu2O is desirable as an absorber material for solar cells using ZnO electrodes because of its reported bandgap (~2.1 eV), a suitable band alignment with ZnO, and the ability to dope both n- and p-type. Pulsed laser deposition (PLD) has been used to grow Cu2O on ZnO and other substrates at low substrate temperatures and in oxygen ambient. Transmission electron microscopy and X-ray diffraction analyses showed a single phase Cu2O with (111) and (200) textures while growing at 200 C and 25 C substrate temperatures respectively. Electrical measurements, including conductivity and electrochemical Mott-Schottky measurements, showed n-type behaviour with resistivity as low as ~3×10^-2 Ω.cm, much lower than previously reported results at ~25 C without any oxygen injection in the PLD chamber. The as grown Cu2O thin films also showed a transition from highly conductive n-type to highly resistive (~4×10^4 Ω.cm) p-type behaviour as the oxygen concentration increased. UV-Vis diffuse reflectance spectroscopy was used to estimate the optical bandgap of the polycrystalline thin films to be in the range 2.01 -2.10 eV.
The poster describes the growth, structural and electrical properties of the Cu2O films, and the properties of Cu2O solar cells grown on ZnO electrodes.
</dc:description>
    <dc:subject>Metal Oxide</dc:subject>
    <dc:subject>Oxide Semiconductor</dc:subject>
    <dc:subject>Materials Physics</dc:subject>
    <dc:subject>Optoelectronic Property of Solar Cell Materials</dc:subject>
    <dc:contributor>Cherns, David</dc:contributor>
    <dc:type>Dataset</dc:type>
    <dc:identifier>doi:10.17632/whksg7scsx.1</dc:identifier>
    <dc:identifier>oai:data.mendeley.com/whksg7scsx.1</dc:identifier>
    <dc:rights>Creative Commons Attribution 4.0 International</dc:rights>
    <dc:rights>http://creativecommons.org/licenses/by/4.0</dc:rights>
    <dc:relation>https://data.mendeley.com/datasets/whksg7scsx</dc:relation>
    <dc:date>2020-05-24T19:37:11Z</dc:date>
</oai_dc:dc></metadata>
        </record>
    </GetRecord>
</OAI-PMH>
