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The research data is for the journal article entitled "Dielectric response of wurtzite gallium nitride in the terahertz frequency range". It consists of three figures: Figure 1: (a) Terahertz waveforms transmitted through the m-plane GaN single crystal using both a PCA-GaP and a ZnTe-ZnTe emitter-detector spectrometer configuration. The waveforms were recorded with the electric field of the terahertz radiation polarized both perpendicular and parallel to the c-axis of the crystal. (b) The corresponding power spectra. The data for each spectrometer configuration are offset for clarity. Figure 2: (a) Refractive index and (b) absorption coefficient values determined from transmission with the terahertz electric field polarized perpendicular and parallel to the c-axis of the m-plane GaN single crystal. The data are fitted using a damped harmonic oscillator model of the phonon contribution to the dielectric dispersion. Inset in (b) shows the real part of the relative dielectric constants. Figure 3: Raman back-scattering spectra of the m-plane GaN single crystal using edge geometry with the electric field (E) polarized parallel to the a- and c-axis. Licence type: Creative Commons Attribution (CC-BY) licence
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