An extension of the computer program for dynamical calculations of RHEED intensity oscillations. Heterostructures

Published: 1 January 2007| Version 1 | DOI: 10.17632/3rtmssy6w4.1
Andrzej Daniluk


Abstract A practical computing algorithm working in real time has been developed for calculations of the reflection high-energy electron diffraction from the molecular beam epitaxy growing surface. The calculations are based on a dynamical diffraction theory in which the electrons are scattered on a potential, which is periodic in the direction perpendicular to the surface. Title of program: RHEED_v2 Catalogue Id: ADUY_v1_1 Nature of problem Reflection high-energy electron diffraction (RHEED) is a very useful technique for studying the growth and the surface analysis of thin epitaxial structures prepared by the molecular beam epitaxy (MBE). The RHEED technique can reveal, almost instantaneously, changes either in the coverage of the sample surface by adsorbates or in the surface structure of a thin film. Versions of this program held in the CPC repository in Mendeley Data ADUY_v1_0; RHEED; 10.1016/j.cpc.2004.12.001 ADUY_v1_1; RHEED_v2; 10.1016/j.cpc.2006.08.003 ADUY_v2_0; RHEEDGr; 10.1016/j.cpc.2005.09.004 ADUY_v3_0; RHEEDGR-09; 10.1016/j.cpc.2009.07.003 ADUY_v4_0; RHEED1DProcess; 10.1016/j.cpc.2009.11.009 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)



Surface Science, Condensed Matter Physics, Crystallography, Computational Physics