RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on a 3C-SiC(111) surface

Published: 11-09-2017| Version 1 | DOI: 10.17632/52nxmwzkxx.1
Andrzej Daniluk


This paper presents a version of simulation program, which facilitates the calculation of changes to the intensity of RHEED oscillations in the function of the glancing angle of incidence of the electron beam, employing various models of scattering crystal potential for heteroepitaxial structure of hexagonal (0001) GaN film nucleated on a 3C-SiC surface, including the possible existence of various diffuse scattering models through the layer parallel to the surface. The previous version of this program may be found at http://dx.doi.org/10.1016/j.cpc.2016.05.029.