Evolution of Giant Exchange Bias with Ferromagnetic Ordering and Robust Memory Effect by Strain Engineering MoS2 in Weak Antiferromagnetic Gating

Name: Evolution of Giant Exchange Bias with Ferromagnetic Ordering and Robust Memory Effect by Strain Engineering MoS2 in Weak Antiferromagnetic Gating
Creator: Shatabda Bhattacharya
Published: 2025-05-30T19:54:04.077Z
Keywords: Transport, Materials Characterization, Raman Microscopy, SQUID (Device)

Bhattacharya, Shatabda

doi:10.17632/55px8bdhd3.1

Evolution of Giant Exchange Bias with Ferromagnetic Ordering and Robust Memory Effect by Strain Engineering MoS2 in Weak Antiferromagnetic Gating

Published: 30 May 2025| Version 1 | DOI: 10.17632/55px8bdhd3.1

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Shatabda Bhattacharya

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this data is the result of the work on NiOOH layered on MoS2 surface as highly exchange bias with memory effect

Evolution of Giant Exchange Bias with Ferromagnetic Ordering and Robust Memory Effect by Strain Engineering MoS2 in Weak Antiferromagnetic Gating

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