TRS: a program to calculate Landau levels and direct dipole transitions in uniaxially stressed semiconductors

Published: 1 January 1991| Version 1 | DOI: 10.17632/79657b7cw7.1
Joachim Schmitz, Hans-Rainer Trebin, Ulrich Rössler


Abstract Quantum resonances in the valence bands of semiconductors under uniaxial stress provide very detailed information on the band parameters if the experimental data can be analyzed on the basis of an adequate theoretical model. Trebin and Rössler developed such a model for narrow-gap semiconductors with a zincblende lattice and applied it to InSb. Using their theoretical results they wrote a program for the numerical evaluation of energy eigenvalues, wave functions and oscillator strengths for d... Title of program: TRS Catalogue Id: ACBH_v1_0 Nature of problem An effective Hamiltonian constructed by invariant expansion is used to calculate Landau levels and wave functions in narrow-gap semiconductors with a zincblende lattice under uniaxial stress. It is based on an eightfold space of uppermost valence and lowest conduction bands at the center of the Brillouin zone and its vicinity. The wave functions are futher used to calculate the oscillator strengths of direct inter- and intraband dipole transitions. Thus program TRS is a valuable tool for the exp ... Versions of this program held in the CPC repository in Mendeley Data ACBH_v1_0; TRS; 10.1016/0010-4655(91)90079-Z This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)



Surface Science, Condensed Matter Physics, Computational Physics