Distribution scheme of the elements in the Al–ZnO/ZnO/ITO device

Published: 9 January 2018| Version 1 | DOI: 10.17632/7gtnwr2msv.1
Contributor:
Adolfo Melo

Description

Figure 9: Distribution scheme of the elements in the Al–ZnO/ZnO/ITO device. The gray band represents the Al-rich region. The yellow band illustrates the thin-film region of ZnO. (a) Distribution without voltage application. (b), (c) First and second positive voltage sweeps. (d) First negative sweep after positive sweeps. The line in (d) represents the conductive path formed by the filament. The blue band represents the grounded lower ITO electrode.

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