Distribution scheme of the elements in the Al–ZnO/ZnO/ITO device
Published: 9 January 2018| Version 1 | DOI: 10.17632/7gtnwr2msv.1
Contributor:
Adolfo MeloDescription
Figure 9: Distribution scheme of the elements in the Al–ZnO/ZnO/ITO device. The gray band represents the Al-rich region. The yellow band illustrates the thin-film region of ZnO. (a) Distribution without voltage application. (b), (c) First and second positive voltage sweeps. (d) First negative sweep after positive sweeps. The line in (d) represents the conductive path formed by the filament. The blue band represents the grounded lower ITO electrode.
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Institutions
Universidade Federal de Sergipe
Categories
Physics, Lattice