Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films

Published: 25 Apr 2018 | Version 1 | DOI: 10.17632/98b5sn2dzx.1
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Description of this data

Figure S1. C-V characteristics of the annealed samples comprising charge trap layer with Co and Ge alone.

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peer reviewed

This data is associated with the following peer reviewed publication:

Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films

Published in: Journal of Physics and Chemistry of Solids

Latest version

  • Version 1

    2018-04-25

    Published: 2018-04-25

    DOI: 10.17632/98b5sn2dzx.1

    Cite this dataset

    Han, Moonsup; Jang, Seunghun; Han, Dongwoo; Joo, Beom Soo; Kim, Hyunseung (2018), “Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films”, Mendeley Data, v1 http://dx.doi.org/10.17632/98b5sn2dzx.1

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Capacitance Measurement

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