Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films

Name: Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films
Creator: Moonsup Han
Published: 2018-04-25T18:15:14.041Z
Keywords: Capacitance Measurement

Han, Moonsup; Jang, Seunghun; Han, Dongwoo; Joo, Beom Soo; Kim, Hyunseung

doi:10.17632/98b5sn2dzx.1

Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films

Published: 25 April 2018| Version 1 | DOI: 10.17632/98b5sn2dzx.1

Contributors:

Moonsup Han, Seunghun Jang, Dongwoo Han, Beom Soo Joo, Hyunseung Kim

Description

Figure S1. C-V characteristics of the annealed samples comprising charge trap layer with Co and Ge alone.

Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films

Description

Files

Categories

Licence