Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films
Published: 25 April 2018| Version 1 | DOI: 10.17632/98b5sn2dzx.1
Contributors:Moonsup Han, Seunghun Jang, Dongwoo Han, Beom Soo Joo, Hyunseung Kim
Figure S1. C-V characteristics of the annealed samples comprising charge trap layer with Co and Ge alone.