Data for: Detailed description of the transient effect of radiative carrier transition in the bulk of semiconductor: the case of Gallium Antimonide

Published: 26 April 2021| Version 1 | DOI: 10.17632/bjfbd8mhwh.1
Contributor:
Megersa Wodajo Shura

Description

All the numerical datum are calculated using excel and the necessary datum are copied to the Origin for graphs or illustrations, because the excel graphs are not appropriate for publications.

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Numerical Modeling

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