Data for: Detailed description of the transient effect of radiative carrier transition in the bulk of semiconductor: the case of Gallium Antimonide
Published: 26 April 2021| Version 1 | DOI: 10.17632/bjfbd8mhwh.1
Contributor:
Megersa Wodajo ShuraDescription
All the numerical datum are calculated using excel and the necessary datum are copied to the Origin for graphs or illustrations, because the excel graphs are not appropriate for publications.
Files
Categories
Numerical Modeling