Analysis code and raw data for 'Automatic Etch Pit Density Analysis in Multicrystalline Silicon'

Published: 10 July 2020| Version 1 | DOI: 10.17632/dv43z9x72t.1
Contributor:
Martin Fleck

Description

"etch_pit_density_analysis.zip" contains the analysis code. See the README.txt for more information. "secco_etched_mc_Si_wafer_image.png" - Optical microscope image, depicting a 2.5cm*1.2cm Secco etched multicrystalline Silicon wafer. Dark spots are etch pits, typically associated with dislocation lines that intersect with the wafer surface. Dark lines are grain boundaries. The leftmost 20% of the wafer have been in contact with the sample carrier during defect etching, explaining the uneven etch result.

Files

Steps to reproduce

See README.txt contained in etch_pit_density_analysis.zip

Categories

Surface Etching, Dislocation Structure, Multicrystalline Silicon Cell

Related Links

Article
https://doi.org/10.1016/j.commatsci.2020.109886
is related to this dataset

Licence