Device-Wise Conformal Calibration of Nonnegative IGBT Remaining-Life Intervals for Power-Electronic Systems under Limited Accelerated-Aging Data

Published: 14 July 2026| Version 2 | DOI: 10.17632/dwk3778kgv.2
Contributor:
Zhipeng Xu

Description

This dataset contains derived processed data, window manifests, model evaluation outputs, plotting figures, configuration files, and reproducibility scripts supporting a study on nonnegative remaining useful life (RUL) interval prediction for insulated-gate bipolar transistor (IGBT) prognostics under limited accelerated-aging data. The experiments use the public NASA IGBT accelerated-aging dataset and evaluate leave-one-device-out prediction, Deep Ensemble-TCN, Monte Carlo Dropout-TCN, GRU baselines, split conformal calibration, and device-wise conformal max calibration. This package does not redistribute the raw NASA source archive. The source data are publicly available from the NASA Open Data Portal: https://data.nasa.gov/dataset/insulated-gate-bipolar-transistor-igbt-accelerated-aging. NASA Open Data identifier: 7wwx-fk77. The included processed tables and result files support reproducibility of the manuscript tables, figures, and core interval-calibration comparisons.

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Computer Science, Engineering, Electrical Engineering, Energy Engineering

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