Elucidating the Role of Oxidation in Two-dimensional Silicon Nanosheets
Published: 27 December 2024| Version 1 | DOI: 10.17632/f3jcwz7tdj.1
Contributors:
, , , , , , Description
We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si-O-Si, OXSi) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with an absolute photoluminescence quantum yield as low as 0.3%. Intentional oxidization of the nanosheets blueshifted the photoluminescence peak to 510 nm and increased the quantum yield by more than an order of magnitude to 8.5%. These results show that controlled oxidation modulates the bandgap of 2D silicon and that previously reported photoluminescence properties for this material resulted, in part, from oxidation.
Files
Steps to reproduce
See related links
Institutions
- Argonne National Laboratory
- Iowa State University
Categories
Semiconductor, Optoelectronics, Nanomaterials, Silicon, Photonics, Photoluminescence, Nanochemistry, 2D Nanomaterials