Data for: Model of DC tunneling conductivity via hydrogen-like impurities in heavily doped compensated semiconductors
Published: 17 January 2023| Version 1 | DOI: 10.17632/fn3cxdbnm8.1
Contributors:
, , , Description
File "Tunneling.m" provides Mathematica code for reproduction of Table 2 of the article. See "Tunneling.pdf" for the results of the code execution.
Files
Steps to reproduce
- Open Tunneling.m file with Mathematica (ver. 6 or newer). - Execute code by pressing "Run Package" button or "Shift-Enter" for every cell. - Calculating results for tunneling resistivity for each semiconductor presented in the Table 2 should appear below the code.
Categories
Semiconductor, Silicon, Germanium, Diamond, Zinc Alloys, Gallium Arsenide, Tunneling, Indium Alloys, Compensation Effect