RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on an Si surface

Published: 8 Jul 2016 | Version 1 | DOI: 10.17632/hn3pt6ytky.1

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Description of this data

This paper presents a computer program, which facilitates the calculation of changes the intensity of RHEED oscillations from the heteroepitaxial structures of (0001)GaN films nucleated on a Si surface. The calculations are based on the use of a dynamical diffraction theory and different models of scattering crystal potential.

The previous version of this program (AETW_v1_0) may be found at http://dx.doi.org/10.1016/j.cpc.2014.07.003.

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peer reviewed

This data is associated with the following peer reviewed publication:

RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on a Si surface

Cite this article

Andrzej Daniluk, RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on a Si surface, November 2016, Volume 207, Pages 536-538, ISSN 00104655, http://dx.doi.org/10.1016/j.cpc.2016.05.029

Published in: Computer Physics Communications

Latest version

  • Version 1

    2016-07-08

    Published: 2016-07-08

    DOI: 10.17632/hn3pt6ytky.1

    Cite this dataset

    Daniluk , Andrzej (2016), “RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on an Si surface”, Mendeley Data, v1 http://dx.doi.org/10.17632/hn3pt6ytky.1

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Natural Sciences

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