Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
Published: 17 July 2018| Version 1 | DOI: 10.17632/jgwhkcj6c5.1
Contributors:
Jack Mullins, Vladimir P. Markevich, Michelle Vaqueiro-Contreras, Nicholas E. Grant, Leif Jensen, Jarosław Jabłoński, John D. Murphy, Matthew P. Halsall, Anthony R. PeakerDescription
Data behind graphs presented in "Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states" The dataset (provided as a single file in XLSX format) contains the data behind the graphs presented in the paper. Each worksheet within the spreadsheet relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.
Files
Institutions
- The University of Manchester
- University of Warwick
Categories
Silicon, Silicon Solar Cell, Deep-Level Transient Spectroscopy