Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Published: 17 Jul 2018 | Version 1 | DOI: 10.17632/jgwhkcj6c5.1
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Description of this data

Data behind graphs presented in "Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states"

The dataset (provided as a single file in XLSX format) contains the data behind the graphs presented in the paper. Each worksheet within the spreadsheet relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.

Experiment data files

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Latest version

  • Version 1

    2018-07-17

    Published: 2018-07-17

    DOI: 10.17632/jgwhkcj6c5.1

    Cite this dataset

    Mullins, Jack; Markevich, Vladimir P.; Vaqueiro-Contreras, Michelle; Grant, Nicholas E.; Jensen, Leif; Jabłoński, Jarosław; Murphy, John D.; Halsall, Matthew P.; Peaker, Anthony R. (2018), “Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states”, Mendeley Data, v1 http://dx.doi.org/10.17632/jgwhkcj6c5.1

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Institutions

The University of Manchester, University of Warwick

Categories

Silicon, Silicon Solar Cell, Deep-Level Transient Spectroscopy

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CC BY 4.0 Learn more

The files associated with this dataset are licensed under a Creative Commons Attribution 4.0 International licence.

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