Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
Published: 17 July 2018| Version 1 | DOI: 10.17632/jgwhkcj6c5.1
Contributors:
Jack Mullins, , , , Leif Jensen, Jarosław Jabłoński, , , Anthony R. PeakerDescription
Data behind graphs presented in "Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states" The dataset (provided as a single file in XLSX format) contains the data behind the graphs presented in the paper. Each worksheet within the spreadsheet relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.
Files
Institutions
The University of Manchester, University of Warwick
Categories
Silicon, Silicon Solar Cell, Deep-Level Transient Spectroscopy