AN EXPERIMENTAL APPROACH TO COMPARE THE DATA OF THE BREAKDOWN VOLTAGE FOR VARIOUS POWER DEVICES
Here, an experimental approach to compare the data of the breakdown voltage for the various power devices has been presented. In the era of electronics devices, there is a demand for higher frequency switches with high breakdown voltage (BV) and small on specific on-resistance (Ron,sp). LDMOS can fulfill all the above demands with better performance. A comparative study of the power devices like PMOS, DG-LDMOS Without STI and Sinker, subPNP, 40 V pLDMOS, Triple RESURF LDMOS, 600 V nLDMOS, 700 V ISO DB-nLDMOS, New SJ-LDMOS has been proposed for the first time. It has been observed that the high voltage MOSFET structure freezing out effect at higher temperatures, results from the output current roll-off ahead of a transition temperature.
Steps to reproduce
Breakdown voltage is the threshold voltage at which the initiation of breakdown occurs. • Higher voltage settings increase the gap, which improves the flushing conditions and helps to stabilize the machining. • The on-resistance of semiconductor devices is inversely proportional to the cube of their breakdown field. • To improve the efficiency of the electrical power conversion system, reduced RON of the semiconductor devices is mandatory.