Raw data for "Improved Interface State Density by Low Temperature Epitaxy Grown AlN for AlGaN/GaN Metal-Insulator-Semiconductor Diodes" paper

Published: 3 April 2020| Version 1 | DOI: 10.17632/k6mgyn7hgk.1
Contributor:
Matthew Whiteside

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Data associated with paper "Improved Interface State Density by Low Temperature Epitaxy Grown AlN for AlGaN/GaN Metal-Insulator-Semiconductor Diodes"

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Dielectric-Semiconductor Interface, Capacitance Measurement

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