C-V measurements on the n-type 4H-SiC Schottky barrier diodes

Published: 22 October 2018| Version 1 | DOI: 10.17632/m9mbdxsf6x.1
Contributors:
Tomislav Brodar,
Ivana Capan,
Vladimir Radulovic,
Luka Snoj,
Zeljko Pastuovic,
Jose Coutinho,
Takeshi Ohshima

Description

This dataset contains capacitance-voltage measurements used for calculation of concentrations of EH1, Z1(=/0), Z2(=/0) and EH3 deep levels in the as-grown and neutron irradiated samples.

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Categories

Semiconductors, Silicon Carbide, Materials Characterization, Schottky Diode, Neutron Irradiation, Capacitance Measurement

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