Data for: Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-SiC MOS Structure

Published: 11 October 2018| Version 1 | DOI: 10.17632/ms5nxv5px3.1
Contributor:
Hengyu Xu

Description

The data details including the followings. Figure 1. C-V characteristics of n-type 4H-SiC (0001) MOS capacitor. Figure 2. The relationship between curvature and Vfb. Figure 3. Interface defect state density (Dit) as a function of energy level below the conduction band of SiC, estimated by the C-ψs method, measured at room . Figure 4. The relationship between curvature and Dit @Ec-E=0.2eV. Figure 5. Infrared spectra of thermally grown SiO2. Figure 6. Change of LO wavenumbers with curvature.

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