Data for: The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Published: 14 Dec 2018 | Version 1 | DOI: 10.17632/nhhj9yckh9.1
Contributor(s):

Description of this data

Atomic position files of relaxed structures after atomic disordering, and melt-quenching.
Example input files for stages of VASP molecular dynamics, Conjugate Gradient Approximation relaxation, and FEFF ELNES simulations.

This data is associated with the article submission to Journal of Nuclear Materials: "The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations"

Experiment data files

This data is associated with the following publication:

The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Published in: Journal of Nuclear Materials

Latest version

  • Version 1

    2018-12-14

    Published: 2018-12-14

    DOI: 10.17632/nhhj9yckh9.1

    Cite this dataset

    Leide, Alexander; Li, Ju; Shao, Lin; Chen, Di; Wang, Ziqiang; Hobbs, Linn (2018), “Data for: The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations”, Mendeley Data, v1 http://dx.doi.org/10.17632/nhhj9yckh9.1

Statistics

Views: 4534
Downloads: 4448

Categories

Silicon Carbide, Amorphization, Radiation Damage

Licence

CC BY NC 3.0 Learn more

The files associated with this dataset are licensed under a Attribution-NonCommercial 3.0 Unported licence.

What does this mean?

You are free to adapt, copy or redistribute the material, providing you attribute appropriately and do not use the material for commercial purposes.

Report