Data for: Detrimental copper-selenide bulk precipitation in the CuIn1-xGaxSe2 thin-film solar cells. A possible reason for the limited performance at large x?

Published: 18 August 2020| Version 1 | DOI: 10.17632/rctrgdg762.1
Polyxeni Tsoulka


Figures 1 to 7 are surface images of Cu(In,Ga)Se2 of different Ga content ( x=[Ga]/([Ga]+[In])=30%, 60% and 100%) before and after annealing at 350°C under vacuumfor 30 days. The Raman analysis was performed at the surface of two Cu(In,Ga)Se2 samples with x=30% and 60% before and after annealing at 350°C under vacuum for 30 days. The XRD analysis was performed on Cu(In,Ga)Se2 layers of 1) x=30%, 2) x=60% before after annealing at 350°C under vacuum for 30 days and 3) on a CuGaSe2 layer (x=100%) The EDS cartography was performed on a CuGaSe2 layer after annealling aunder vacuum for 24h at 350°C All the CIGSe films were grown on soda-lime glass/Mo substrate by physical vapor deposition using the Cu-RO process



Raman Spectroscopy, Scanning Electron Microscopy, X-Ray Diffraction, Energy-Dispersive X-Ray Spectroscopy