The effect of substrate temperature and oxygen partial pressure on the properties of nanocrystalline copper oxide thin films grown by pulsed laser deposition
Description
The data presented in this paper are related to the research article entitled “Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivity” (S.F.U. Farhad et al., 2020)[1]. The detailed processing conditions of copper oxide thin films and a variety of characterization techniques used are described in the same ref. [1] https://doi.org/10.1016/j.matdes.2020.108848. Thin films need to grow on different substrates to elucidate various properties of the individual layer for attaining optimum processing conditions required for devising efficient optoelectronic junctions as well as thin film stacks for different sensing applications. This article describes the effect of substrate temperature and oxygen partial pressure on the structural, morphological, optical, and electrical properties of pulsed laser deposited (PLD) nanocrystalline copper oxide thin films on quartz glass, ITO, NaCl(100), Si(100), ZnO coated FTO substrates. The low temperature grown copper oxide and zinc oxide thin films by PLD were used for devising solid n-ZnO/p-Cu2O junction and investigated their photovoltaic and interface properties using dynamic photo-transient current measurement at zero bias voltage and TEM/EDX respectively. These datasets are made publicly available for enabling extended analyses and as a guide for further research.