Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

Published: 27 April 2020| Version 1 | DOI: 10.17632/rzj4dt999v.1
Contributor:
Wu-Yih Uen

Description

A typical surface morphology of the high Ge content SiGe epilayer prepared on Si(111) substrate.

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