Electrical memristance behavior
Published: 9 January 2018| Version 1 | DOI: 10.17632/t9hb863nf3.1
Figure 7: I-V characteristics for memristor behavior of the Al–ZnO(15 min)/ZnO(60 min)/ITO/glass sample (ZA2) as a function of time for: (a) (0 V–1 V–0 V)×5 and (0 V–(-1) V–0 V)×5, (b) (0 V–2 V–0 V)×5 and (0 V–(-2) V–0 V)×5, (c) (0 V–4 V–0 V)×5 and (0 V–(-4) V–0 V)×5 sweeps. The curves in the insets in (a), (b), and (c) represent the standard I-V results (pinched hysteresis). (d) Characteristic I-V after the transition to a filamentary behavior; arrows indicate the direction of the sweeping process; the number (1) indicates the ON state in which the sample was after the voltage sweep in (c); (2) shows a current instability and the consequent breakdown; (3) subsequent sweep from (-4) V to confirm the permanent OFF state of the device.
Universidade Federal de Sergipe
Physics, Electrical System, Thin Film