Data for: Application of Hydrosilane-Free Atmospheric Pressure Chemical Vapor Deposition of SiOx Films in the Manufacture of Crystalline Silicon Solar Cells

Published: 6 September 2020| Version 1 | DOI: 10.17632/v2wvd8nz8b.1
Contributor:
Esmail Issa

Description

Process sequences for the preparation of light-induced plated (LIP) silicon heterojunction (SHJ) solar cell front side metallization on transparent conducting oxide (TCO) by a) printing an Ag seed layer and by b) printing an organic local mask. Cu adherence to the TCO is promoted by LIP of less than1 µm thick Ni seed layer. Note that the existent rear side metallization and TCO layer are not shown.

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Categories

Chemical Vapor Deposition, Silicon Dioxide, Silicon Solar Cell, Metallization

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