SCAPS-1D Simulation Data: CsSnBr3/Si Tandem Solar Cell
Description
Hypothesis: A lead-free CsSnBr3/silicon tandem solar cell with two terminals can exceed the efficiency limits of a single junction through optimization, current matching, and spectral splitting. What the data shows: Simulation workflow in SCAPS-1D for a 2-terminal perovskite/silicon tandem cell. Data on the optical and electrical properties of the materials for each layer of the sub-cells. Optimization of individual subcells (top perovskite cell and bottom silicon cell). Analysis and filtered spectrum data for perovskite thickness variation (100-700 nm). Analysis and data for current density matching at 250 nm/130 µm. Final tandem performance via interpolation of the sub-cells. Key results: The optimal thickness of CsSnBr3 was 250 nm for current density matching. The efficiency of the tandem device was 32.70% with an average EQE of 93.10%. The tandem achieved higher efficiency by connecting the sub-cells in series. Interpretation and use: Researchers can reproduce the design and simulation using the .def and .material files provided in SCAPS-1D. They can analyze the effects of optical filtering, validate the current density matching methodology, and extend studies on perovskite-silicon tandem architectures. The files include: structure definitions (.def), material parameters (.material), absorption coefficients (.txt), optimization results (.csv), J-V curves (.txt), band diagrams (.txt), filtered spectra (.cvs), and EQE data (.txt). It enables complete reproduction and analysis of the tandem design process.
Files
Steps to reproduce
Methodology: 1.1 Input of optical, electrical, and absorption parameters for the top perovskite sub-cell and bottom silicon sub-cell. 1.2 Optimization of the top and bottom sub-cells. 1.3 Generation of J-V curves and energy band diagrams for the individual sub-cells. 1.4 Generation of filtered spectra for different CsSnBr3 thicknesses. The perovskite thickness varies between 100 and 700 nm in increments of 50 nm. 1.5 Current density matching by varying the thickness of the top sub-cell silicon using a filtered spectrum with a perovskite thickness of 250 nm. 1.6 Obtaining the J-V curves once again of the sub-cells at the JSC matching point, i.e., with absorber thicknesses of 250 nm and 130 µm for CsSnBr3 and c-Si, respectively. 1.7 The J-V and P-V curves of the CsSnBr3/Silicon tandem device are obtained by interpolating the individual J-V curves of the previous step. 1.8 The EQE curves of the individual sub-cells are obtained, and then the EQE curve of the final tandem device is estimated.
Institutions
- Instituto Nacional de Astrofisica Optica y Electronica
- Benemerita Universidad Autonoma de Puebla Instituto de Ciencias
- Instituto Tecnologico de Puebla