Kinematical calculations of RHEED intensity oscillations during the growth of thin epitaxial films

Published: 15-08-2005| Version 1 | DOI: 10.17632/vmcbt4yffm.1
Contributor:
Andrzej Daniluk

Description

Abstract A practical computing algorithm working in real time has been developed for calculating the reflection high-energy electron diffraction (RHEED) from the molecular beam epitaxy (MBE) growing surface. The calculations are based on the use of kinematical diffraction theory. Simple mathematical models are used for the growth simulation in order to investigate the fundamental behaviors of reflectivity change during the growth of thin epitaxial films prepared using MBE. Title of program: GROWTH Catalogue Id: ADVL_v1_0 Nature of problem Reflection high-energy electron diffraction (RHEED) is a very useful technique for studying growth and surface analysis of thin epitaxial structures prepared using the molecular beam epitaxy (MBE). The simplest approach to calculating the RHEED intensity during the growth of thin epitaxial films is the kinematical diffraction theory (often called kinematical approximation), in which only a single scattering event is taken into account. The biggest advantage of this approach is that we can calcul ... Versions of this program held in the CPC repository in Mendeley Data ADVL_v1_0; GROWTH; 10.1016/j.cpc.2005.04.005 ADVL_v2_0; GROWTHgr, GROWTH06; 10.1016/j.cpc.2006.06.013 ADVL_v2_1; GROWTH06_v2; 10.1016/j.cpc.2009.01.024 ADVL_v3_0; Growth09; 10.1016/j.cpc.2009.11.011 ADVL_v4_0; GrowthCP; 10.1016/j.cpc.2011.02.014 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)

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