Data for: Atomic Insight Into Concurrent He, D, and T Sputtering and Near-Surface Implantation of 3C-SiC Crystallographic Surfaces

Published: 11 Feb 2019 | Version 1 | DOI: 10.17632/w99w5ythw8.1

Description of this data

The files are the processed data correspond to the following figure numbers in the manuscript:

Figures 2-4: C-Graphite_HeDT_TRIM.SP.dat, SiC_100_HeDT_MD.dat, SiC_110_HeDT_MD.dat, SiC_110_HeDT_SBE_TRIM.SP.dat, SiC_111G_C_HeDT_MD.dat, SiC_111G_Si_HeDT_MD.dat, SiC_HeDT_TRIM.SP.dat

Figure 5: All files labeled ImplantationProfile_*_300K.dat

The data is formatted in human readable space-separated value type and can be opened with MS Excel. Each file has header content, indicated by a line starting with #. The header information provides details about the data.

### Interatomic LAMMPS potential file

The file SiC_HeH.tersoff.zbl can be used with the LAMMPS molecular dynamics package to simulate SiC along with He and H. The lines below are examples of what should be placed in your LAMMPS input script:

pair_style tersoff/zbl
pair_coeff * * SiC_HeH.tersoff.zbl Si C He H

Experiment data files

This data is associated with the following publication:

Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces

Published in: Nuclear Materials and Energy

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Computational Materials Science, Silicon Carbide, Molecular Dynamics, Sputtering


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