Interphase formation of ethylenic polymers on photoreactive benzophenone-type adhesion promoters

Description

The presented data supports the publication "Interphase formation of ethylenic polymers on photoreactive benzo-phenone-type adhesion promoters" and covers XPS data of polystyrene immobilized on silicon wafer surfaces modified by photoreactive adhesion promoters using UV light (365 nm LED). 220125 xps data table 1: This file contains XPS spectra on thick droplets of the adhesion promoters after synthesis to characterize their elemental stoichiometry and check the quality of the materials 230725 XPS data table S1: This file contains XPS data of silicon wafers after modified with adhesion promoter PS-K after immobilization of polystyrene (290 kDa Mp) using increasing irradiation doses of UV light (2-1800 s). 250704 XPS data table S2: This file contains XPS data of licon wafers after modified with adhesion promoter triPS-F after immobilization of polystyrene of increasing molecular weight (3.3-5150 kDa Mp) at a single (maximum) UV irradiation dose corresponding to 1800 s. The file also contains data on 2 other immobilized polymer films using the same conditions but PMMA and poly alpha-methylstyrene (PaMS). The data is provided in form of Vamas-files, which can be read by any XPS data analysis program.

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XPS has been measured using an Escalab 250Xi (Thermo Fisher, UK) equipped with a monochro-matic AlKα source (1486.7 eV, 650 µm analysis spot). Neutralisation of the surface was done using a combination of low-energy electrons and Ar+ ions. The spectra were acquired in electrostatic mode at 150 eV constant analyser pass energy (CEA) for survey and at 20 eV CAE for high-resolution spec-tra, at which a spectral resolution of 0.45 eV can be achieved. Source and analyzer are installed at the magic angle. The angle of emission was 0 ° with respect to the surface normal. The data was evaluated using CasaXPS v2.3.25 using Scofield sensitivity factors. The binding energy scale was ref-erenced to the main C1s line at 285.0 eV. Mixed Gaussian/Lorentzian line shapes (70/30) have been employed for fitting the high-resolution spectra. The product solutions the silanes were diluted to 0.1 w% with a 9:1 mixture of ethanol and acetic acid solution (pH 3). The silanes were immobilized on Si-wafer at room temperature after cleaning the wafers by an air plasma for 10 minutes (Zepto One, Diener electronic GmbH & Co. KG). The immobi-lization procedure involved dipping the wafer into the silane solution, drying and heating to 130 °C for 10 s in order to fix the monosilanes and promote a siloxane formation (the monosilanes are easily washed off by solvent otherwise). The silanized wafer were then washed thoroughly with acetone to remove unbound silane. The immobilization was also evaluated for different soak times but yielded always constant XPS concentrations so that the soak time appears to be irrelevant.

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