Data for: Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films
Description
Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions — nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion-antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating developing methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au4+ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in-situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from approximately 150◦ C to 250◦C. Finally, we describe the crystallization kinetics using the Johnson-Mehl-Avrami-Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate. This dataset includes all the raw data and the Python script used for data analysis and figure generation for the paper. This includes .csv files containing the data used in figures, microscopy images (.tif files), python code used for the analysis, and an Origin file (.opju) containing all figures and data spreadsheets, which can be opened using Origin Viewer, a free application that permits viewing and copying of data contained in Origin project files.
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Funding
U.S. National Science Foundation
DMR-2039380
Office of Science
Center for Integrated Nanotechnologies
U.S. National Science Foundation
DMR-1905909
Sandia National Laboratories
U.S. National Science Foundation
DMR-2330562