Data for: Design consideration of high voltage Ga2O3 vertical schottky barrier diode with field plate

Published: 26-04-2018| Version 1 | DOI: 10.17632/xf3pv2v7h6.1
Contributors:
Ho-Young Cha,
Chunghyung Cho,
Juneheang Choi

Description

FIG 1_data_ Electric field strength at locations A, B, and C as a function of reverse voltage for different insulators; (b) SiO2, (c) Al2O3, and (d) HfO2 FIG 1_ data_ (e) Reverse characteristics as a function of field plate length and (f) forward characteristics as a function of field plate length.

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