Data for: Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers

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It contains all the origin diagrams in the article.（Output power for the four structures（5outp) and Internal quantum efficiency(5iqe);Energy band diagrams of: (a) structure A; (b) structure B; (c) structure C at 180 mA,(elc) Electron current density and (hcd) Hole current density at 180 mA;(elec) Electron concentration and (holec) hole concentration; (rd) Radiative recombination rates and (sp) spontaneous emission rates)

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