Data for: Graded (Al)GaInP Window-Emitter Structures for Improved Short-Wavelength Current Collection

Name: Data for: Graded (Al)GaInP Window-Emitter Structures for Improved Short-Wavelength Current Collection
Creator: Jacob Boyer
Published: 2019-09-03T15:30:24.292Z
Keywords: Photovoltaics, Multi-Junction III-V Solar Cells, III-V Phosphide Semiconductor, Device Modeling of Solar Cell

Boyer, Jacob

doi:10.17632/y3wzxs6jy3.1

Data for: Graded (Al)GaInP Window-Emitter Structures for Improved Short-Wavelength Current Collection

Published: 3 September 2019| Version 1 | DOI: 10.17632/y3wzxs6jy3.1

Contributor:

Jacob Boyer

Description

Device modeling data developed via simple analytical model predicting IQE performance metrics, photogeneration rates, and collection probability of various graded structures implemented on Ga0.51In0.49P solar cells. Experimental IQE data of actual devices produced using compositionally-graded digital alloys grown atop Ga0.51In0.49P solar cells grown via MBE.

Data for: Graded (Al)GaInP Window-Emitter Structures for Improved Short-Wavelength Current Collection

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