Data for: A novel empirical I-V model for GaN HEMTs
Published: 4 May 2018| Version 2 | DOI: 10.17632/y5zvk462b8.2
Contributors:
Yeting Jia,
Jie Yang,
Ning Ye,
Zhenyu Yuan,
Shuo Gao
Description
measured output characteristics and transfer characteristics for GaN HEMTs :CGH60008D, CGH40010F, QPD1010, NPTB00004A
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