Data for: A novel empirical I-V model for GaN HEMTs

Published: 04-05-2018| Version 2 | DOI: 10.17632/y5zvk462b8.2
Contributors:
Yeting Jia,
Jie Yang,
Ning Ye,
Zhenyu Yuan,
Shuo Gao

Description

measured output characteristics and transfer characteristics for GaN HEMTs :CGH60008D, CGH40010F, QPD1010, NPTB00004A

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