Data for: Effects of Ultraviolet Wavelength and Intensity on AlGaN Thin Film Surfaces Irradiated Simultaneously with CF4 Plasma and Ultraviolet

Published: 11 October 2018| Version 1 | DOI: 10.17632/z97gk2xcvn.1
Contributors:
Retsuo Kawakami,
Takashi Mukai,
Masahito Niibe,
Yoshitaka Nakano,
Chisato Azuma,
Yuki Yoshitani,
Shin-Ichiro Yanagiya

Description

Fig. 2. Comparison between Al0.24Ga0.76N band-gap energy and energy spectra of photons emitted from 280- and 310-nm LEDs. The energy spectrum of photons emitted from a blacklight lamp is also drawn in the same figure [22]. Fig. 3. Comparison between F/Ga, N/Ga, and Al/Ga ratios of the as-grown AlGaN surface and the AlGaN surface irradiated for 5 min with CF4 plasma only. Fig. 4. (a) F/Ga, (b) N/Ga, and (c) Al/Ga ratios of AlGaN surfaces irradiated simultaneously with CF4 plasma and UV at wavelengths of 280 and 310 nm, as a function of UV intensity. The results at an UV intensity of 0 mW/cm2 correspond to those caused by CF4 plasma-only irradiation. Fig. 5. F 1s regions in XPS spectra of AlGaN surfaces irradiated simultaneously with CF4 and UV at wavelengths of (a) 280 and (b) 310 nm. The results at an UV intensity of 0 mW/cm2 correspond to those caused by CF4 plasma-only irradiation. Fig. 6. Comparison between CFx fractions of the surfaces irradiated simultaneously with CF4 and UV at wavelengths of 280 and 310 nm, as a function of UV intensity. The result at an UV intensity of 0 mW/cm2 correspond to those caused by CF4 plasma-only irradiation. Fig. 7. (a) An AFM image and (b) a height profile along a straight green line of AlGaN surface irradiated simultaneously with CF4 plasma and 280 nm-UV at 3 mW/cm2.

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