Optics Communications

we provide the original data of the exprimenal results. This data contains the three dimensional coordinatesthe of the point cloud images

Visualization 1: Experimental demonstration of image cross-correlator tracking scan, and 3D topography reconstruction under tracking. Visualization 2: A 3D color imaging Visualization 3: Adynamic 3D imaging

Part of research data

BER_QPSK.xlsx: data recorded corresponding to Fig. 3, Fig. 4 and Fig. 6. Frequency offset tracking: data recorded corresponding to Fig. 7. Q&R trcking : data recorded corresponding to Fig. 8 and Fig. 9.

The data utilized in the paper "Three-dimensional polarization ray tracing in electro-optic crystals" should be open by Matlab. The files named as "dnA0", "dnA1", and "dnA2" are the data for Figure 4. The files named as "dnB0", "dnB1", and "dnB2" are the data for Figure 5. The files named as "Intensity0", "Intensity1", and "Intensity2" are the data for Figure 6.

These pictures are experimental circuit diagram and spectrogram.

Ultraviolet (UV) light-emitting diodes (LEDs) based on zinc oxide (ZnO) materials have been the subject of many investigations because of their potential applications. ZnO/MgZnO multiple-quantum-well UV LEDs with graded-composition barriers were developed and numerically analyzed in this study. The simulation results demonstrate that an optimized LED with a Mg composition graded from 24% to 2% in each triangular barrier exhibits the highest internal quantum efficiency (IQE) (88.0%) at 200 A/cm2, showing a 31.3% increase from the conventional LED with square barriers. This enhancement is attributed to the modified energy band structures that improve the symmetry in carrier transportation and increase the radiative recombination rate in each ZnO quantum well, thus enhancing the IQE of the device. Also, the different band-offset ratios of the MgZnO/ZnO and InGaN/GaN heterojunction, which lead to the different carrier transport and electroluminescence properties of ZnO- and GaN-based LEDs, were discussed here, which gives researchers new insights into device design for ZnO-based LEDs. Fig. 1. Schematic diagrams of ZnO-based UV LEDs. The distributions of Mg composition in the active region of the conventional LED and the designed LED with graded-composition in each QB from Mg0.24Zn0.76O to MgxZn1−xO (0 ≤ x ≤ 0.24) along the [0001] direction is shown on the right. Fig. 2. IQEs versus forward injection current density of the LEDs with different x values. The inset shows the IQE of LEDs at 200 A/cm2 as a function of x value. Fig. 3. Energy band diagrams of MQWs in the conventional LED (x = 0.24) and the LED with an x value of 0.20 operated under forward bias at 200 A/cm2. Fig. 4. Carrier concentrations near MQWs in the LEDs with x values from 0.24 to 0 at 200 A/cm2. Fig. 5. FWHM of (a) electron and (b) hole concentrations in each QW as a function of Mg composition x. Fig. 6. Distributions of radiative recombination rates in MQWs of LEDs with x values from 0.24 to 0 at 200 A/cm2.

These data are the simulation and experimental results of a photon-counting communication system based on non-photon-number-resolution detectors

1.The amplified picture of our three APDs at the same time; 2.The whole experiment environment; 3.We monitor the real-time data on FPGAs,including tranmitted and received data; 4.The spectrum picture of received optical signal.

This datas are all results of research about channel estimation in wireless ultraviolet communication.