Si-doped double-barrier AlGaN/GaN HEMT with high drain current density
Published: 27 July 2026| Version 1 | DOI: 10.17632/296x2gsn6s.1
Contributors:
Lei Li, , , , , Description
Si-doped double-barrier AlGaN/GaN HEMT with high drain current density
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Institutions
- Guangxi UniversityGuangxi, Nanning
Categories
Semiconductor, Compound Semiconductor