beta-Ga2O3/Si, experimental Data
Description
The broad range of potential applications for gallium oxide as an advanced material in the semiconductor industry necessitates further research into cost-effective thin-film growth methods, particularly on non-native substrates. In this study β-Ga₂O₃ films were deposited onto a silicon substrate using RF magnetron sputtering. Raman spectroscopy and X-ray diffraction (XRD) analyses confirmed the high crystalline quality of the synthesized gallium oxide films. The mechanical stresses in the β-Ga₂O₃/Si heterostructure were experimentally determined using X-ray diffraction
Files
Steps to reproduce
Ga₂O₃ films were deposited on Si(111) substrates using RF magnetron sputtering with a 99.999% Ga₂O₃ target. Raman spectroscopy was employed to determine the structural phase and crystal quality of the Ga₂O₃ thin films on the Si substrate. The measurements were carried out in a quasi-backscattering geometry using a Horiba Jobin-Yvon T64000 triple spectrometer integrated with an Olympus BX-41 microscope. Experiments were conducted at room temperature using the 532-nm line from a diode-pumped solid-state (DPSS) laser (Spectra-Physics), see Raman_Ga2O3_SI.opj, Supplementary Data. X-ray diffraction (XRD) measurements were performed in Bragg–Brentano geometry on a Philips X’Pert PRO-MRD diffractometer using Cu Kα₁ radiation (λ = 1.5406 Å), with an anodic voltage of 45 kV and a current of 40 mA. Qualitative phase analysis of the XRD patterns was carried out using HighScore software (Malvern Panalytical), see XRD_Ga2O3_SI.opj, Supplementary Data.