Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Published: 28-11-2018| Version 1 | DOI: 10.17632/5c9b7283td.1
Contributor:
George Christian

Description

Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses. Photoluminescence spectra obtained at 10 K for those quantum well structures.

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