Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Published: 28 November 2018| Version 1 | DOI: 10.17632/5c9b7283td.1
Contributor:
George Christian

Description

Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses. Photoluminescence spectra obtained at 10 K for those quantum well structures.

Files

Institutions

The University of Manchester

Categories

Semiconductors, Photoluminescence, Gallium Nitride

Licence