Data for: In-situ formation of indium seed layer for copper metallization of silicon heterojunction solar cells

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Enclosed please find original manuscript and original figures of our article titled " In-situ formation of indium seed layer for copper metallization of silicon heterojunction solar cells". Highlights:  An innovative method of copper metallization with in-situ seed layer technique is proposed for SHJ solar cells.  The maximum peeling force of plated busbar with In/Ni/Cu stacks reaches 4.23 N, higher than screen-printed silver busbar (2.31 N).  The all-solution based plating process requires neither full area seed layer deposition nor subsequent etch back step, showing great potential of low cost SHJ solar cells.

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