ITO_CdS_Sb2Se3_Mo

Description

This dataset contains the numerical simulation results used to analyze and optimize an ITO/CdS/Sb₂Se₃/Mo thin-film solar cell using SCAPS-1D. The calculations were performed to evaluate the influence of rear-contact work function, Sb₂Se₃ absorber thickness, CdS buffer-layer thickness, Sb₂Se₃ bulk defect density, and Sb₂Se₃ acceptor concentration on the photovoltaic response of the device. The dataset includes dark and illuminated J–V curves, photovoltaic parameters, energy-band diagrams, generation-rate profiles, SRH recombination-rate profiles, and electric-field distributions. The main photovoltaic figures of merit extracted from the simulations are open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency. The reference device corresponds to the ITO/CdS/Sb₂Se₃/Mo structure under AM1.5G illumination at 100 mW cm⁻² and 300 K. The optimized numerical configuration was obtained by combining the most favorable design conditions identified from the parameter sweeps, including improved absorber thickness, reduced Sb₂Se₃ bulk defect density, and adjusted acceptor concentration.

Institutions

• Benemérita Universidad Autónoma de Puebla

  Puebla, Puebla City

Categories

Funders

• Secretaría de Ciencia, Humanidades, Tecnología e Innovación

  Mexico City

  Grant ID: 210210

Licence